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XYD30N03AJ

TO252，N管，30V，20A，15mΩ;

30N03

N-Channel30-V(D-S)MOSFET

30N03A

30VN-ChannelPower

GeneralDescription TheseN-channelenhancementmodepowermosfetsused advancedtrenchtechnologydesign,providedexcellentRdson andlowgatecharge.WhichaccordswiththeRoHSstandard. Features VDS=30V,ID=90A RDS(ON),3.9mΩ(Typ)@VGS=10V RDS(ON),6.5mΩ(Typ)@VGS=4.5V Lowon

30N03A

30VN-ChannelPower

Features VDS=30V,ID=90A RDS(ON),3.9mΩ(Typ)@VGS=10V RDS(ON),6.5mΩ(Typ)@VGS=4.5V Lowonresistance Lowgatecharge Fastswitching Lowreversetransfercapacitances

30N03B

30A竊?0VN-CHANNELMOSFET

A30N03A

N-Channel30-V(D-S)MOSFET

ADM30N03Z

N-ChannelEnhancementModeFieldEffectTransistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●GreenDeviceAvailable Description: TheADM30N03ZusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withl

CJU30N03

N-ChannelPowerMOSFET

HM30N03K

N-ChannelEnhancementModePowerMOSFET

KI30N03DFN

N-ChannelMOSFET