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XCBCX69-16

SOT-89 NPN 三極管;

GDXC

BC69-16PA

20V,2APNPmediumpowertransistors

Featuresandbenefits ?Highcurrent ?Threecurrentgainselections ?Highpowerdissipationcapability ?Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) ?LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) ?AEC-Q101qualified

BC69-16PAS

20V,2APNPmediumpowertransistors

BC69-16PAS

20V,2APNPmediumpowertransistors

Featuresandbenefits *Highcollectorcurrentcapability ICandICM *Threecurrentgainselections *ReducedPrinted-CircuitBoard(PCB) arearequirements *LeadlessverysmallSMDplastic packagewithmediumpowercapability *Exposedheatsinkforexcellentthermal andelectricalcond

BCP69-16

PNPmediumpowertransistor

DESCRIPTION PNPmediumpowertransistorinaSOT223plasticpackage.NPNcomplement:BCP68. FEATURES ?Highcurrent(max.1A) ?Lowvoltage(max.20V). APPLICATIONS ?Generalpurposeswitchingandamplification ?Powerapplicationssuchasaudiooutputstages.

BCP69-16

20V,2APNPmediumpowertransistors

Featuresandbenefits ?Highcurrent ?Threecurrentgainselections ?Highpowerdissipationcapability ?Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) ?LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) ?AEC-Q101qualified

BCP69-16

PNPSiliconAFTransistor

PNPSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP68(NPN)

BCP69-16

PNPPlastic-EncapsulateTransistors

BCP69-16

PNPSiliconAFTransistor(ForgeneralAFapplicationHighcollectorcurrentHighcurrentgain)

PNPSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP68(NPN)

BCP69-16-Q

20V,2APNPmediumpowertransistors

1.Generaldescription PNPmediumpowertransistorsinaSOT223(SC-73)Surface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits ?Highcurrent ?Threecurrentgainselections ?Highpowerdissipationcapability ?QualifiedaccordingtoAEC-Q101andrecommendedforuseinau