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C2331

SiliconPowerTransistors

DESCRIPTION ?WithTO-220package ?Complementtotype2SA1008 ?Lowcollectorsaturationvoltage ?Fastswitchingspeed APPLICATIONS ?Switchingregulators ?DC/DCconverters ?Highfrequencypoweramplifiers

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

C2331Y

NPNLOWFREQUENCYAMPLIFIERMEDIUMSPEEDSWITCHING)

LOWFREQUENCYAMPLIFIERMEDIUMSPEEDSWITCHING ?ComplementtoKSA931 ?HighCollector-BaseVoltageVcso=80V ?CollectorCurrentIc=700mA ?CollectorDisslpationPc=1W

SamsungSamsung semiconductor

三星三星半導(dǎo)體

CEH2331

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-20V,-5.2A,RDS(ON)=48mW@VGS=-4.5V. RDS(ON)=60mW@VGS=-2.5V. RDS(ON)=78mW@VGS=-1.8V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TSOP-6package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEH2331

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-5.2A,RDS(ON)=48mW@VGS=-4.5V. RDS(ON)=60mW@VGS=-2.5V. RDS(ON)=78mW@VGS=-1.8V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEH2331A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-5.5A,RDS(ON)=42mW@VGS=-4.5V. RDS(ON)=55mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant. RDS(ON)=75mW@VGS=-1.8V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CES2331

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-20V,-4.2A,RDS(ON)=48mΩ@VGS=-4.5V. RDS(ON)=60mΩ@VGS=-2.5V. RDS(ON)=78mΩ@VGS=-1.8V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CES2331

P-Channel30V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgTested APPLICATIONS ?ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

CES2331

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-4.2A,RDS(ON)=48mW@VGS=-4.5V. RDS(ON)=60mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. Leadfreeproductisacquired. RDS(ON)=78mW@VGS=-1.8V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CES2331A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-4.3A,RDS(ON)=42mW@VGS=-4.5V. RDS(ON)=55mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=75mW@VGS=-1.8V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHM2331PT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT4.2Ampere FEATURE *Smallflatpackage.(SC-59) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    XC2331D

  • 制造商：

    Infineon Technologies AG

  • 制造商：

    Infineon Technologies AG

  • 功能描述：

    16 BIT FLASH C11 BCS - Tape and Reel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Infineon Technologies
20+
LQFP-64
29860
Infineon微控制器MCU-可開原型號(hào)增稅票
 詢價(jià)
Infineon Technologies
20+
PG-LQFP-64-6
600000
原裝正品,現(xiàn)貨通路商
 詢價(jià)
Infineon Technologies
21+
64-TQFP
5680
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)
 詢價(jià)
Infineon
1931+
N/A
493
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INFINEON
20+
IC
1900
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
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英飛凌/國(guó)際整流器
22+
NA
500000
萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂
 詢價(jià)
Infineon
22+
NA
493
加我QQ或微信咨詢更多詳細(xì)信息,
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Infineon Technologies
22+
9000
原廠渠道,現(xiàn)貨配單
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Infineon Technologies
24+
原裝
5000
原裝正品,提供BOM配單服務(wù)
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Infineon(英飛凌)
24+
LQFP64EP(10x10)
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
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更多XC2331D供應(yīng)商 更新時(shí)間2025-7-23 18:10:00

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