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X28HC256

5 Volt, Byte Alterable E2PROM

DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES ?AccessTime:70ns ?SimpleByteandPageWrite —Si

X28HC256

5 Volt, Byte Alterable EEPROM

5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory Features ?Accesstime:70ns ?Simplebyteandpa

X28HC256

256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM

TheX28HC256isasecondgenerationhighperformance CMOS32kx8EEPROM.ItisfabricatedwithIntersil’s proprietary,texturedpolyfloatinggatetechnology,providinga highlyreliable5Vonlynonvolatilememory. TheX28HC256supportsa128-bytepagewriteoperation, effectivelyproviding

X28HC256

256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; ? Access time: 90ns\n? Simple byte and page write\n? Single 5V supply\n? No external high voltages or VP-P control circuits\n? Self timed\n? No erase before write\n? No complex programming algorithms\n? No overerase problem\n? Low power CMOS\n? Active: 60mA\n? Standby: 500μA\n? Software data protection\n? Protects data against system level inadvertent writes\n? High-Speed page write capability\n? Highly reliable Direct Write? cell\n? Endurance: 100,000 cycles\n? Data retention: 100 years\n? Early end of write detection\n? DATA polling\n? Toggle bit polling\n? RoHS compliant\n;

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0. 8s. The X28HC256 also features DATA polling and Toggle bit polling, two methods of providing early end of write detection. The X28HC256 also supports the JEDEC standard software data protection feature for protecting against inadvertent writes during power-up and power-down. Endurance for the X28HC256 is specified as a minimum 100, 000 write cycles per byte and an inherent data retention of 100 years

X28HC256

256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM

X28HC256

5V, Byte Alterable EEPROM

X28HC256D-12

5 Volt, Byte Alterable E2PROM

DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES ?AccessTime:70ns ?SimpleByteandPageWrite —Si

X28HC256D-12

5 Volt, Byte Alterable EEPROM

5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory Features ?Accesstime:70ns ?Simplebyteandpa

X28HC256D-12

LOW POWER CMOS EEPROM with hi-speed page write capability 256K EEPROM

TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory.TheX28HC256supportsa128-bytepagewriteoperation,effectivelyprovidinga24μ

X28HC256D-15

5 Volt, Byte Alterable E2PROM

DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES ?AccessTime:70ns ?SimpleByteandPageWrite —Si