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WST33H0NC

2.4-2.5 GHz, 300 W GaN Transistor

Description Wolfspeed’sWST33H0NCisa300Wpackaged,partially-matchedtransistorutilizingWolfspeed’s highperformance,50V,0.25umGaNonSiCproductionprocess.TheWST33H0NCoperatesfrom2.4- 2.5GHzandtargetsmicrowaveheatingapplications.Underclass-Coperation,theWST33H0NC typi

WST33H0NC

2.4 - 2.5 GHz, 300W GaN Transistor; ·Psat: 300 W\n·DE: 75 %\n·LSG: 17 dB\n·S21: 26 dB\n·S11: -5 dB\n·S22: -6 dB\n·CW operation\n;

The WST33H0NC is a 300W packaged, partially-matched transistor utilizing The high performance, 50V, 0.25um GaN on SiC production process. The WST33H0NC operates from 2.4-2.5 GHz and targets microwave heating applications. Under class-C operation, the WST33H0NC typically achieves 300 W of saturated output power with 14 dB of large signal gain and 75% drain efficiency via a 2.4-2.5 GHz reference design. Available in a thermally-enhanced, Cu-based package, the WST33H0NC provides superior performance under CW operation allowing customers to improve SWaP-C benchmarks in their next-generation systems.\n