描述 Description

The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) designed for applications up to 5 GHz. The device operates from

supply voltages up to 50 V and can achieve a P3dB of 10 W. It is housed in a 3 mm X 4 mm DFN package. While it is designed for communications infrastructure applications with crest factor reduced and digitally pre-distorted LTE or 5G NR signals, it may be suitable for other

applications at frequencies up to 5 GHz, restricted only by its maximum operating conditions.

特性 Features

? GaN on SiC HEMT technology

? Operating frequency : up to 5 GHz

? P3dB : up to 10 W

? Supply voltage : up to 50 V

? Maximum junction temperature : 225 °C

? Pb-free and RoHS compliant