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WSGPA01-V1-R3K

10 W, 5 GHz, GaN on SiC General Purpose Power Amplifier

Description TheWSGPA01isaGaNonSiCDiscreteGeneralPurposeAmplifier(GPA)designedforapplicationsupto5GHz.Thedeviceoperatesfrom supplyvoltagesupto50VandcanachieveaP3dBof10W.Itishousedina3mmX4mmDFNpackage.Whileitisdesignedforcommunicationsinfrastru

WSGPA01-V1-R3K

10 W; 5 GHz; GaN on SiC General Purpose Power Amplifier; ·GaN on SiC HEMT technology\n·Operating frequency : up to 5 GHz\n·P3dB : up to 10 W\n·Supply voltage : up to 50 V\n·Pb-free and RoHS compliant\n;

The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) designed for applications up to 5 GHz. The device operates from supply voltages up to 50 V and can achieve a P3dB of 10 W. It is housed in a 3 mm X 4 mm DFN package. While it is designed for communications infrastructure applications with crest factor reduced and digitally pre-distorted LTE or 5G NR signals; it may be suitable for other applications at frequencies up to 5 GHz; restricted only by its maximum operating conditions.\n