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CA3060E

110kHz,OperationalTransconductanceAmplifierArray

Description TheCA3060monolithicintegratedcircuitconsistsofanarrayofthreeindependentOperationalTransconductanceAmplifiers(seeNote).Thistypeofamplifierhasthegenericcharacteristicsofanoperationalvoltageamplifierwiththeexceptionthattheforwardgaincharacteristic

HARRIS

Harris Corporation

CBD3060LCT

LOWVFSCHOTTKYRECTIFIER

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

CBRX3060CT

TrenchSchottkyBarrierRectifier

Good-Ark

GOOD-ARK Electronics

CC3060C-AZ

3-phase3-line500VACAvailable5-150AForoutputlineonly

SOSHINSoshin electric Co., Ltd.

雙信電機(jī)雙信電機(jī)株式會(huì)社

CEB3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,105A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=8mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,75A,RDS(ON)=6.6mW@VGS=10V. RDS(ON)=9.5mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,75A,RDS(ON)=6.6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.5mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,14A,RDS(ON)=7.8m?@VGS=10V. RDS(ON)=11.5m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3060

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

CEM3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,14A,RDS(ON)=7.8mW@VGS=10V. RDS(ON)=11.5mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

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2025+
DFN3333-8
5000
國(guó)產(chǎn)南科平替供應(yīng)大量
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WINSOK
24+
DFN3*3-8
9600
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WINSOK/微碩
23+
DFN3*3-8
50000
原裝正品 支持實(shí)單
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24+
N/A
79000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
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WINSOK微碩
25+
DFN3X3-8
188600
全新原廠原裝正品現(xiàn)貨 歡迎咨詢
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WINSOK/微碩
2511
DFN3X3-8
360000
電子元器件采購(gòu)降本 30%!盈慧通原廠直采,砍掉中間差價(jià)
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WINSOK/微碩
24+
DFN3*3-8
60000
全新原裝現(xiàn)貨
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WINSOK微碩
2447
DFN 3.3x3.3-8
105000
3000個(gè)/圓盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,
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WINSOK
2022+
DFN33
50000
原廠代理 終端免費(fèi)提供樣品
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WINSOK
23+
DFN3X3-8
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
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