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IRF9620PBF

HEXFETPowerMOSFET

Description TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. ?Dynamicd

IRF

International Rectifier

IRF9620PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9620S

PowerMOSFET(Vdss=-200V,Rds(on)=1.5ohm,Id=-3.5A)

Description TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. ?SurfaceM

IRF

International Rectifier

IRF9620S

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheD2PAK(T

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9620S

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9620SPBF

HEXFETPowerMOSFET

Description TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. ?SurfaceM

IRF

International Rectifier

IRF9620SPbF

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheD2PAK(T

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9620SPBF

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9620STRLPbF

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheD2PAK(T

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9620STRLPBFA

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

技術(shù)參數(shù)

  • 封裝:

    SOT89-3
    ESOP8
    TO-252

  • MOSFET Vds:

    450V

  • 過溫保護 內(nèi)置:

    Y

  • 應(yīng)用功率 175VAC-264VAC:

    6W(<60mA)
    9W(<60mA)
    15W(<60mA)

  • 應(yīng)用功率 90VAC-264VAC:

    4W(<60mA)
    7W(<60mA)
    12W(<60mA)

供應(yīng)商型號品牌批號封裝庫存備注價格
WINSEMI
24+
SOT-89
880000
明嘉萊只做原裝正品現(xiàn)貨
詢價
24+
N/A
62000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
詢價
WINSEMI
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
WINSEMI
24+
NA/
5750
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
詢價
WINSEMI
24+
TO-252
60000
全新原裝現(xiàn)貨
詢價
WINSEMI/穩(wěn)先微
21+
ESOP8
200000
只做原裝正品
詢價
WINSEMI穩(wěn)先微
23+
ESOP8
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
詢價
VIMICRO
2023+
QFN
48000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
詢價
中心微
1926+
QFN48
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
VIMICROWX
23+
QFN
8678
原廠原裝
詢價
更多WS9620AN供應(yīng)商 更新時間2025-7-28 9:21:00