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ECS-9055R

ECS-9000,6GigELANwith4PoE,210GRJ45,2SSDTray,4COM,3SIM,6USB3.0,16IsolatedDIO

VECOWVecow Co., Ltd.

超恩超恩股份有限公司

FSJ9055D

55A,-60V,0.029Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofHarrisSemiconductorhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSJ9055R

55A,-60V,0.029Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofHarrisSemiconductorhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSTJ9055D

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.ImmunitytoSingleEventEffects(SEE)iscombinedwith100KRADsoftotaldosehardnesstoprovidedeviceswhichareideallysuite

Intersil

Intersil Corporation

FSTJ9055R

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.ImmunitytoSingleEventEffects(SEE)iscombinedwith100KRADsoftotaldosehardnesstoprovidedeviceswhichareideallysuite

Intersil

Intersil Corporation

FSTYC9055D

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.ImmunitytoSingleEventEffects(SEE)iscombinedwith100KRADsoftotaldosehardnesstoprovidedeviceswhichareideallysuite

Intersil

Intersil Corporation

FSTYC9055R

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.ImmunitytoSingleEventEffects(SEE)iscombinedwith100KRADsoftotaldosehardnesstoprovidedeviceswhichareideallysuite

Intersil

Intersil Corporation

FSYC9055D

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofHarrisSemiconductorhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSYC9055R

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofHarrisSemiconductorhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

K9055RED

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ETCList of Unclassifed Manufacturers

未分類制造商

技術(shù)參數(shù)

  • 封裝：

    DIP7

  • MOSFET RDS_ON：

    3Ω

  • MOSFET Vds：

    500V

  • OVP 內(nèi)置：

    Y

  • 過溫保護 內(nèi)置：

    Y

  • 應用功率 175VAC-264VAC：

    120V/300mA

  • 應用功率 90VAC-264VAC：

    72V/300mA

供應商型號品牌批號封裝庫存備注價格
WINSEMI
23+
SOP7
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
24+
N/A
73000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
WINSEMI/穩(wěn)先微
25+
SOP-8
188600
全新原裝現(xiàn)貨
 詢價
WINSEMI/穩(wěn)先微
24+
SOP8
156000
專營穩(wěn)先微原裝保障
 詢價
WINSEMI
2030+
SOP-8
1500
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
WINSEMI/穩(wěn)先微
21+
DIP7
50000
只做原裝正品
 詢價
Winsemi(穩(wěn)先微)
2447
ESOP8
105000
4000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
Winsemi(穩(wěn)先微)
2021+
ESOP8
536
詢價
24+
QFP
46
詢價
WINSEMI穩(wěn)先微
24+
DIP-7
5000
全新原裝正品,現(xiàn)貨銷售
 詢價
更多WS9055F供應商 更新時間2025-7-27 13:01:00

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