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CA3252M

QuadGatedNon-InvertingPowerDriver

Description TheCA3252isusedtointerfacelow-levellogictohighcurrentloads.EachPowerDriverhasfourinvertingswitchesconsistingofaninvertinglogicinputstageandaninvertinglow-sidedriveroutputstage.Allinputsare5VTTL/CMOSlogiccompatibleandhaveacommonEnableinput

Intersil

Intersil Corporation

CEA3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,5A,RDS(ON)=32m?@VGS=10V. RDS(ON)=45m?@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-89package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEA3252

N-Channel60-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFETs ?175°CMaximumJunctionTemperature ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

CED3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,25A,RDS(ON)=28m?@VGS=10V. RDS(ON)=39m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,7.5A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3252

N-Channel20V(D-S)MOSFET

FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?OptimizedforHigh-SideSynchronousRectifierOperation ?100RgTested ?100UISTested APPLICATIONS ?NotebookCPUCore -High-SideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

CEM3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,7.5A,RDS(ON)=28mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3252L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,8A,RDS(ON)=29mΩ@VGS=10V. RDS(ON)=36mΩ@VGS=4.5V. RDS(ON)=55mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■Surfacemount

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3252L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,8A,RDS(ON)=29mW@VGS=10V. RDS(ON)=36mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. RDS(ON)=55mW@VGS=2.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,8A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=45mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
WINSEMI
23+
SOT23-6
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價(jià)
WINSEMI
SOP-7
999999
全新原裝正品 一級(jí)代理假一罰十 長期有貨
 詢價(jià)
WINSEMI/穩(wěn)先微
24+
DIP-8
56000
專營WINSEMI穩(wěn)先微原裝保障
 詢價(jià)
WINSEMI
23+
DIP8
12000
原裝正品假一罰百!可開增票!
 詢價(jià)
WS
24+
DIP8
2550
原裝現(xiàn)貨假一賠十
 詢價(jià)
WINSEMI
22+
DIP8
30000
十七年VIP會(huì)員,誠信經(jīng)營，一手貨源，原裝正品可零售！
 詢價(jià)
WS
22+
DIP8
16800
全新進(jìn)口原裝現(xiàn)貨,假一罰十
 詢價(jià)
WINSEMI
23+
DIP8
98900
原廠原裝正品現(xiàn)貨!!
 詢價(jià)
WINSEMI
24+
NA/
7250
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
 詢價(jià)
WINSEMI
25+
DIP8
996880
只做原裝,歡迎來電資詢
 詢價(jià)
更多WS3252YP供應(yīng)商 更新時(shí)間2025-7-28 15:59:00

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