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首頁 >WS1A3640>規(guī)格書列表

零件型號	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
WS1A3640	文件：422.7 Kbytes Page：7 Pages	GaN on SiC Power Amplifier Module for 5G Description TheWS1A3640isanAsymmetricDohertyPowerAmplifierModule(PAM)integratingWolfspeedGaNonSiCHEMTtransistorswith matchingandbiasingnetworksonamultilayerlaminatesubstratewithadvancedheatsinkingtechnology.TheWS1A3640hasbeen designedtooperatefrom3300MHzt	WOLFSPEED WOLFSPEED, INC.	WOLFSPEED
WS1A3640	文件：300 bytes Page：1 Pages	39.5 dBm GaN-on-SiC Power Amplifier Module; 3300-3800 MHz; ·Gate bias supplies for main and peaking sub-amplifiers from either side of the device\n·GaN-on-SiC technology\n·Integrated harmonic terminations\n·Pb-free and RoHS compliant\n·Recommended driver is the WSGPA01\n; The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating GaN-on-SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3300 MHz to 3800 MHz; from supply voltages up to 50 V; at average output power levels of 8 to 10 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.\n\n	MACOMTyco Electronics 瑪科姆技術(shù)方案控股有限公司	MACOM
WS1A3640V2-01	文件：422.7 Kbytes Page：7 Pages	GaN on SiC Power Amplifier Module for 5G Description TheWS1A3640isanAsymmetricDohertyPowerAmplifierModule(PAM)integratingWolfspeedGaNonSiCHEMTtransistorswith matchingandbiasingnetworksonamultilayerlaminatesubstratewithadvancedheatsinkingtechnology.TheWS1A3640hasbeen designedtooperatefrom3300MHzt	WOLFSPEED WOLFSPEED, INC.	WOLFSPEED
WS1A3640V2-02	文件：422.7 Kbytes Page：7 Pages	GaN on SiC Power Amplifier Module for 5G Description TheWS1A3640isanAsymmetricDohertyPowerAmplifierModule(PAM)integratingWolfspeedGaNonSiCHEMTtransistorswith matchingandbiasingnetworksonamultilayerlaminatesubstratewithadvancedheatsinkingtechnology.TheWS1A3640hasbeen designedtooperatefrom3300MHzt	WOLFSPEED WOLFSPEED, INC.	WOLFSPEED
WS1A3640V2-03	文件：422.7 Kbytes Page：7 Pages	GaN on SiC Power Amplifier Module for 5G Description TheWS1A3640isanAsymmetricDohertyPowerAmplifierModule(PAM)integratingWolfspeedGaNonSiCHEMTtransistorswith matchingandbiasingnetworksonamultilayerlaminatesubstratewithadvancedheatsinkingtechnology.TheWS1A3640hasbeen designedtooperatefrom3300MHzt	WOLFSPEED WOLFSPEED, INC.	WOLFSPEED
WS1A3640V2-08	文件：422.7 Kbytes Page：7 Pages	GaN on SiC Power Amplifier Module for 5G Description TheWS1A3640isanAsymmetricDohertyPowerAmplifierModule(PAM)integratingWolfspeedGaNonSiCHEMTtransistorswith matchingandbiasingnetworksonamultilayerlaminatesubstratewithadvancedheatsinkingtechnology.TheWS1A3640hasbeen designedtooperatefrom3300MHzt	WOLFSPEED WOLFSPEED, INC.	WOLFSPEED
WS1A3640-V2-R00A	文件：422.7 Kbytes Page：7 Pages	GaN on SiC Power Amplifier Module for 5G Description TheWS1A3640isanAsymmetricDohertyPowerAmplifierModule(PAM)integratingWolfspeedGaNonSiCHEMTtransistorswith matchingandbiasingnetworksonamultilayerlaminatesubstratewithadvancedheatsinkingtechnology.TheWS1A3640hasbeen designedtooperatefrom3300MHzt	WOLFSPEED WOLFSPEED, INC.	WOLFSPEED
WS1A3640-V2-R1	文件：422.7 Kbytes Page：7 Pages	GaN on SiC Power Amplifier Module for 5G Description TheWS1A3640isanAsymmetricDohertyPowerAmplifierModule(PAM)integratingWolfspeedGaNonSiCHEMTtransistorswith matchingandbiasingnetworksonamultilayerlaminatesubstratewithadvancedheatsinkingtechnology.TheWS1A3640hasbeen designedtooperatefrom3300MHzt	WOLFSPEED WOLFSPEED, INC.	WOLFSPEED
WS1A3640-V2-R3K	文件：422.7 Kbytes Page：7 Pages	GaN on SiC Power Amplifier Module for 5G Description TheWS1A3640isanAsymmetricDohertyPowerAmplifierModule(PAM)integratingWolfspeedGaNonSiCHEMTtransistorswith matchingandbiasingnetworksonamultilayerlaminatesubstratewithadvancedheatsinkingtechnology.TheWS1A3640hasbeen designedtooperatefrom3300MHzt	WOLFSPEED WOLFSPEED, INC.	WOLFSPEED

技術(shù)參數(shù)

Min Frequency (MHz)：
3300
Max Frequency(MHz)：
3800
P3dB Output Power(W)：
60
Gain(dB)：
13.5
Efficiency(%)：
52
Operating Voltage(V)：
48
Package Category：
Surface Mount
Form：
Packaged Discrete Transistor
Technology：
GaN-on-SiC

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市達恩科技有限公司	WS1A3640	MACOM	24+		5000	原裝軍類可排單	詢價
深圳市河鋒鑫科技有限公司	WS1A476M6L007	SAMWH	2022+	DIP	51200	原廠代理終端免費提供樣品	詢價
深圳市易訊博科技有限公司	WS1A47R0J	Bourns	22+	NA	5889	加我QQ或微信咨詢更多詳細(xì)信息,	詢價
深圳市高捷芯城科技有限公司	WS1A47R0J	BOURNS	24+	插件	7350	現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!!	詢價
現(xiàn)代芯城（深圳）科技有限公司	WS1A47R0J		24+	N/A	70000	一級代理-主營優(yōu)勢-實惠價格-不悔選擇	詢價
深圳市賽爾通科技有限公司	WS1C		23+		65480		詢價
深圳市鵬順微電子科技有限公司	WS1M1500J	Bourns	2022+	原廠原包裝	6800	全新原裝支持表配單中國著名電子元器件獨立分銷	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	WS1M15R0J	BOURNS/伯恩斯	23+		11200	原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO	詢價
深圳市賽特興科技有限公司	WS1M32-20G	WHITE	QQ咨詢	QFP	112	全新原裝研究所指定供貨商	詢價
深圳市納立科技有限公司	WS1M32-20G3M	white	三年內(nèi)		1983	只做原裝正品	詢價

更多WS1A3640供應(yīng)商更新時間2025-7-29 14:17:00

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