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CA3060E

110kHz,OperationalTransconductanceAmplifierArray

Description TheCA3060monolithicintegratedcircuitconsistsofanarrayofthreeindependentOperationalTransconductanceAmplifiers(seeNote).Thistypeofamplifierhasthegenericcharacteristicsofanoperationalvoltageamplifierwiththeexceptionthattheforwardgaincharacteristic

HARRIS

Harris Corporation

CBD3060LCT

LOWVFSCHOTTKYRECTIFIER

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

CBRX3060CT

TrenchSchottkyBarrierRectifier

Good-Ark

GOOD-ARK Electronics

CC3060C-AZ

3-phase3-line500VACAvailable5-150AForoutputlineonly

SOSHINSoshin electric Co., Ltd.

雙信電機(jī)雙信電機(jī)株式會社

CEB3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,105A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=8mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,75A,RDS(ON)=6.6mW@VGS=10V. RDS(ON)=9.5mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,75A,RDS(ON)=6.6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.5mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,14A,RDS(ON)=7.8m?@VGS=10V. RDS(ON)=11.5m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3060

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

CEM3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,14A,RDS(ON)=7.8mW@VGS=10V. RDS(ON)=11.5mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
MicrosemiCorporation
24+
N/A
8000
原廠正規(guī)渠道、進(jìn)口原裝正品價格合理
 詢價
Microsemi Corporation
24+
-
56200
一級代理/放心采購
 詢價
Microsemi
1942+
N/A
908
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物
 詢價
MICROCHIP/微芯
23+
896-BGA
35200
只做原裝主打品牌QQ詢價有詢必回
 詢價
MICROCHIP(美國微芯)
2447
FCBGA-896(31x31)
31500
84個/托盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長
 詢價
MICROSEMI
20+
IC
84
就找我吧!--邀您體驗愉快問購元件!
 詢價
MICROCHIP(美國微芯)
2021+
FCBGA-896(31x31)
499
詢價
微芯
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
 詢價
MICROCHIP(美國微芯)
23+
FCBGA-896(31x31)
9980
原裝正品，支持實單
 詢價
Microchip
22+
896-BGA
9000
原廠渠道,現(xiàn)貨配單
 詢價
更多WP3060A供應(yīng)商 更新時間2025-7-28 10:16:00

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