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WFU2N60

N-Channel MOSFET

600VN-ChannelMOSFET Features □LowIntrinsicCapacitances □ExcellentSwitchingCharacteristics □ExtendedSafeOperatingArea □UnrivalledGateCharge:8.5nC(Typ.) □BVDSS=600V,ID=2A □LowerRDS(on):5?(Max)@VG=10V □100AvalancheTested

WFU2N60

Silicon N-Channel MOSFET

GeneralDescription\nThis Power MOSFET is produced using Winsemi's advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency swi; ? 2A,600V,RDS(on)(Max 5.0?)@VGS=10V\n? Ultra-lowGateCharge(Typical15.3nC)\n? FastSwitchingCapability\n? 100%AvalancheTested\n? MaximumJunctionTemperatureRange(150℃)?;

WFU2N60

HIGH VOLTAGE N-Channel MOSFET

600V N-Channel MOSFET; □ Low Intrinsic Capacitances\n□ Excellent Switching Characteristics\n□ Extended Safe Operating Area\n□ Unrivalled Gate Charge : 8.5 nC (Typ.)\n□ BVDSS=600V,ID=2A\n□ Lower RDS(on) : 5? (Max) @VG=10V\n□ 100% Avalanche Tested?;

WFU2N60

Silicon N-Channel MOSFET

WFU2N60

600V N-Channel MOSFET

WFU2N60_10

600V N-Channel MOSFET

WFU2N60B

Silicon N-Channel MOSFET

WFU2N60B

Silicon N-Channel MOSFET

WFU2N60B_13

Silicon N-Channel MOSFET

WFU2N60S

超結(jié)MOSFET