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首頁(yè)>W9725G6JB>規(guī)格書詳情

W9725G6JB集成電路(IC)的存儲(chǔ)器規(guī)格書PDF中文資料

W9725G6JB
廠商型號(hào)

W9725G6JB

參數(shù)屬性

W9725G6JB 封裝/外殼為84-TFBGA;包裝為托盤;類別為集成電路(IC)的存儲(chǔ)器;產(chǎn)品描述:IC DRAM 256MBIT PARALLEL 84WBGA

功能描述

4M ??4 BANKS ??16 BIT DDR2 SDRAM

封裝外殼

84-TFBGA

文件大小

1.4855 Mbytes

頁(yè)面數(shù)量

87 頁(yè)

生產(chǎn)廠商

WINBOND

中文名稱

華邦電子

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-8-22 22:24:00

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W9725G6JB規(guī)格書詳情

GENERAL DESCRIPTION

The W9725G6JB is a 256M bits DDR2 SDRAM, organized as 4,194,304 words x 4 banks x 16 bits. This device achieves high speed transfer rates up to 1066Mb/sec/pin (DDR2-1066) for various applications. W9725G6JB is sorted into the following speed grades: -18, -25, 25I, 25A, 25K and -3. The -18 grade parts is compliant to the DDR2-1066 (7-7-7) specification. The -25/25I/25A/25K grade parts are compliant to the DDR2-800 (5-5-5) or DDR2-800 (6-6-6) specification (the 25I industrial grade parts which is guaranteed to support -40°C ≤ TCASE ≤ 95°C). The -3 grade parts is compliant to the DDR2-667 (5-5-5) specification.

FEATURES

? Power Supply: VDD, VDDQ = 1.8 V ± 0.1V

? Double Data Rate architecture: two data transfers per clock cycle

? CAS Latency: 3, 4, 5, 6 and 7

? Burst Length: 4 and 8

? Bi-directional, differential data strobes (DQS and DQS ) are transmitted / received with data

? Edge-aligned with Read data and center-aligned with Write data

? DLL aligns DQ and DQS transitions with clock

? Differential clock inputs (CLK and CLK )

? Data masks (DM) for write data

? Commands entered on each positive CLK edge, data and data mask are referenced to both edges of DQS

? Posted CAS programmable additive latency supported to make command and data bus efficiency

? Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)

? Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality

? Auto-precharge operation for read and write bursts

? Auto Refresh and Self Refresh modes

? Precharged Power Down and Active Power Down

? Write Data Mask

? Write Latency = Read Latency - 1 (WL = RL - 1)

? Interface: SSTL_18

? Packaged in WBGA 84 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    W9725G6JB25I

  • 制造商:

    Winbond Electronics

  • 類別:

    集成電路(IC) > 存儲(chǔ)器

  • 包裝:

    托盤

  • 存儲(chǔ)器類型:

    易失

  • 存儲(chǔ)器格式:

    DRAM

  • 技術(shù):

    SDRAM - DDR2

  • 存儲(chǔ)容量:

    256Mb(16M x 16)

  • 存儲(chǔ)器接口:

    并聯(lián)

  • 寫周期時(shí)間 - 字,頁(yè):

    15ns

  • 電壓 - 供電:

    1.7V ~ 1.9V

  • 工作溫度:

    -40°C ~ 95°C(TC)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    84-TFBGA

  • 供應(yīng)商器件封裝:

    84-WBGA(8x12.5)

  • 描述:

    IC DRAM 256MBIT PARALLEL 84WBGA

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2500
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