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W29EE01115B

128K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29EE011isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128K×8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE011resultsinfastprogram/eraseo

W29EE01115B

128K x 8 CMOS FLASH MEMORY; ·? Single 5-volt program and erase operations\n·? Fast page-write operations\n?? - 128 bytes per page\n?? - Page program cycle: 10 mS (max.)\n?? - Effective byte-program cycle time: 39 mS\n?? - Optional software-protected data write\n·? Fast chip-erase operation: 50 mS\n·? Read access time: 90/150 nS\n·? Page program/erase cycles: 1K/10K\n·? Ten-year data retention\n·? Software and hardware data protection\n·? Low power consumption\n- Active current: 25 mA (typ.)\n- Standby current: 20 mA (typ.)\n·? Automatic program timing with internal VPP generation\n·? End of program detection\n? - Toggle bit\n? - Data polling\n·? Latched address and data\n·? TTL compatible I/O\n·? JEDEC standard byte-wide pinouts\n·? Available packages: 32-pin 600 mil DIP, TSOP, and PLCC??????;

GENERAL DESCRIPTION\nThe W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K?x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of theW29EE011 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.FEATURES\n·? Single 5-volt program and erase operations\n·? Fast page-write operations\n?? - 128 bytes per page\n?? - Page program cycle: 10 mS (max.)\n?? - Effective byte-program cycle time: 39 mS\n?? - Optional software-protected data write\n·? Fast chip-erase operation: 50 mS\n·? Read access time: 90/150 nS\n·? Page program/erase cycles: 1K/10K\n·? Ten-year data retention\n·? Software and hardware data protection\n·? Low power consumption\n- Active current: 25 mA (typ.)\n- Standby current: 20 mA (typ.)\n·? Automatic program timing with internal VPP generation\n·? End of program detection\n? - Toggle bit\n? - Data polling\n·? Latched address and data\n·? TTL compatible I/O\n·? JEDEC standard byte-wide pinouts\n·? Available packages: 32-pin 600 mil DIP, TSOP, and PLCC