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W15

型號：CMPZDA43V；Package：SOT-23；SURFACE MOUNT DUAL, SILICON ZENER DIODE 2.4 VOLTS THRU 47 VOLTS 350mW

DESCRIPTION: TheCENTRALSEMICONDUCTORCMPZDA2V4seriesdualsiliconZenerdiodeisahighqualityvoltageregulator,connectedinacommonanodeconfiguration,foruseinindustrial,commercial,entertainmentandcomputerapplications. MARKINGCODE:SEEMARKINGCODESONELECTRICALCHARACTERISTI

W16

型號：CMPZDA47V；Package：SOT-23；SURFACE MOUNT DUAL, SILICON ZENER DIODE 2.4 VOLTS THRU 47 VOLTS 350mW

DESCRIPTION: TheCENTRALSEMICONDUCTORCMPZDA2V4seriesdualsiliconZenerdiodeisahighqualityvoltageregulator,connectedinacommonanodeconfiguration,foruseinindustrial,commercial,entertainmentandcomputerapplications. MARKINGCODE:SEEMARKINGCODESONELECTRICALCHARACTERISTI

W18F

型號：MIC3291-18YD6；Package：SOT-26；1.2MHz PWM White LED Driver with Internal Schottky Diode and Single-Wire Linear Brightness Control

GeneralDescription TheMIC3291isaPWMswitchingboostregulatorthatisoptimizedforconstantcurrentwhiteLED(WLED)driverapplications.TheMIC3291featuresaninternalSchottkydiode,allowinganefficientDC/DCsolutionthatrequiresonlyfourexternalcomponents. Features ?Singlewi

W10NK80Z

型號：STW10NK80Z；Package：TO-247；N-CHANNEL 800V - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH??ower MOSFET

Description TheSuperMESH?seriesisobtainedthroughanextremeoptimizationofST’swellestablished strip-basedPowerMESH?layout.Inadditiontopushingon-resistancesignificantlydown,special careistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.

W10NK80Z

型號：STW10NK80Z；Package：TO-247；N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH? Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description ThesedevicesareN-channelZener-protected PowerMOSFETsdevelopedusing STMicroelectronics'SuperMESH?technology, achievedthroughoptimizationofST'swell establishedstrip-basedPowerMESH?layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesign

W11NK100Z

型號：STW11NK100Z；Package：TO-247；N-channel 1000V - 1.1廓 - 8.3A - TO-247 Zener - Protected SuperMESH??PowerMOSFET

Description TheSuperMESH?seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH?layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchs

W11NM80

型號：STW11NM80；Package：TO-247；N-channel 800 V, 0.35 Ω, 11 A MDmesh? Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220, TO-247

Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh?technology,which associatesth

W18NK80Z

型號：STW18NK80Z；Package：TO-247；N-CHANNEL 800V - 0.34??- 19A TO-247 Zener-Protected SuperMESH??ower MOSFET

■TYPICALRDS(on)=0.34? ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURING REPEATIBILITY DESCRIPTION TheSuperMESH?seriesisobtainedthroughan extremeoptimizationofST’swellestablishedst

W18

型號：TPS79918DDCR-TP；Package：SOT23-5；300mA 2uA Higt PSRR Voltage Regulator

Features ?2μAGroundCurrentatnoLoad ?±2OutputAccuracy ?300mAOutputCurrent .10nADisableCurrent(byoption) ?WideOperatingInputVoltageRange:1.2Vto 5.5V ?DropoutVoltage:0.18Vat300mA(VOUT=3.3V) ?SupportFixedOutputVoltage1.2V,1.5V,1.6V, 1.8V,2.5V,2.8V,3.0V,

W107Z65C

型號：TW107Z65C；Package：TO-247-4L；MOSFETs Silicon Carbide N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Chipdesignof3rdgeneration(Built-inSiCschottkybarrierdiode) (2)Lowdiodeforwardvoltage:VDSF=-1.35V(typ.) (3)Highvoltage:VDSS=650V (4)Lowdrain-sourceon-resistance:RDS(ON)=107mΩ(typ.) (5)Lesssusceptiblet