FEATURES

? Ultrafast and ultrasoft recovery

? Very low IRRM and Qrr

? Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C

? Designed and qualified for industrial level

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

BENEFITS

? Reduced RFI and EMI

? Reduced power loss in diode and switching transistor

? Higher frequency operation

? Reduced snubbing

? Reduced parts count

DESCRIPTION

VS-HFA15TB60S, VS-HFA15TB60-1 is a state of the art

ultrafast recovery diode. Employing the latest in epitaxial

construction and advanced processing techniques it

features a superb combination of characteristics which

result in performance which is unsurpassed by any rectifier

previously available. With basic ratings of 600 V and

15 A continuous current, the VS-HFA15TB60S,

VS-HFA15TB60-1 is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to

ultrafast recovery time, the HEXFRED? product line features

extremely low values of peak recovery current (IRRM) and

does not exhibit any tendency to “snap-off” during the tb

portion of recovery. The HEXFRED features combine to offer

designers a rectifier with lower noise and significantly lower

switching losses in both the diode and the switching

transistor. These HEXFRED advantages can help to

significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED VS-HFA15TB60S,

VS-HFA15TB60-1 is ideally suited for applications in power

supplies and power conversion systems (such as inverters),

motor drives, and many other similar applications where

high speed, high efficiency is needed.