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VP0104N3-G中文資料微芯科技數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

廠商型號(hào) |
VP0104N3-G |
功能描述 | P-Channel Enhancement-Mode Vertical DMOS FET |
文件大小 |
759.62 Kbytes |
頁(yè)面數(shù)量 |
14 頁(yè) |
生產(chǎn)廠商 | MICROCHIP |
中文名稱(chēng) | 微芯科技 |
網(wǎng)址 | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-8-14 23:01:00 |
人工找貨 | VP0104N3-G價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
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General Description
The VP0104 low-threshold Enhancement-mode
(normally-off) transistors use a vertical DMOS structure
and a well-proven silicon-gate manufacturing process.
This combination produces a device with the power
handling capabilities of bipolar transistors and the high
input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal
runaway and thermally induced secondary breakdown.
Microchip’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance,
and fast switching speeds are desired.
特性 Features
? Free from Secondary Breakdown
? Low Power Drive Requirement
? Ease of Paralleling
? Low CISS and Fast Switching Speeds
? Excellent Thermal Stability
? Integral Source-Drain Diode
? High Input Impedance and High Gain
Applications
? Motor Controls
? Converters
? Amplifiers
? Switches
? Power Supply Circuits
? Drivers (Relays, Hammers, Solenoids, Lamps,
Memories, Displays, Bipolar Transistors, etc.)
產(chǎn)品屬性
- 型號(hào):
VP0104N3-G
- 功能描述:
MOSFET 40V 8Ohm
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
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12245 |
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