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首頁(yè)>VN3205NJ>規(guī)格書(shū)詳情

VN3205NJ中文資料SUTEX數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

VN3205NJ
廠商型號(hào)

VN3205NJ

功能描述

N-Channel Enhancement-Mode Vertical DMOS FETs

文件大小

728.49 Kbytes

頁(yè)面數(shù)量

6 頁(yè)

生產(chǎn)廠商

SUTEX

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-9-5 20:38:00

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VN3205NJ規(guī)格書(shū)詳情

General Description

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.

特性 Features

? Free from secondary breakdown

? Low power drive requirement

? Ease of paralleling

? Low CISS and fast switching speeds

? Excellent thermal stability

? Integral source-drain diode

? High input impedance and high gain

Applications

? Motor controls

? Converters

? Amplifiers

? Switches

? Power supply circuits

? Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

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