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VI20100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20100C-E3

Trench MOS Schottky technology

UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20100C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmaximum10s,per JESD22-B106(forTO-220AB,ITO-220AB,

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20100C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20100C-E3SLASH4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20100C-E3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20100C-E3/4W

Package：TO-262-3，長引線，I2Pak，TO-262AA；包裝：散裝 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE ARRAY SCHOTTKY 100V TO262

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

詳細(xì)參數(shù)

  • 型號：

    VI20100C

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

供應(yīng)商型號品牌批號封裝庫存備注價格
POWER
23+
TO-220
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價
VISHAY/威世
22+
TO-262AA
41811
原裝正品現(xiàn)貨
 詢價
原裝VISHAY
19+
TO-262AA
20000
原裝現(xiàn)貨假一罰十
 詢價
VISHAY/威世
1942+
TO-262AA
9852
只做原裝正品現(xiàn)貨或訂貨!假一賠十!
 詢價
原裝VISHAY
24+
TO-262AA
63200
一級代理/放心采購
 詢價
VISHAY
1809+
TO-262
3675
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價
VISHAY
23+
TO262AA
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
Vishay Semiconductor Diodes Di
22+
TO262AA
9000
原廠渠道,現(xiàn)貨配單
 詢價
VISHAY/威世
23+
TO262AA
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
Vishay Semiconductor Diodes Di
23+
TO262AA
9000
原裝正品，支持實(shí)單
 詢價
更多VI20100C供應(yīng)商 更新時間2025-7-26 14:01:00

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