描述 Description

The VG3617161ET is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V power supply. This SDRAM is delicately designed with performance concern for current high-speed application. Programmable CAS Latency and Burst Length make it possible to be used in widely various domains. It is packaged by using JEDEC standard pinouts and standard plastic 50-pin TSOP II.

特性 Features

? Single 3.3V +/- 0.3V power supply

? Clock frequency:166MHz, 143MHz, 125MHz

? Fully synchronous with all signals referenced to a positive clock edge

? Programmable CAS Iatency (2,3)

? Programmable burst length (1,2,4,8,& Full page)

? Programmable wrap sequence (Sequential/Interleave)

? Automatic precharge and controlled precharge

? Auto refresh and self refresh modes

? Dual internal banks controlled by A11(Bank select)

? Simultaneous and independent two bank operation

? I/O level : LVTTL interface

? Random column access in every cycle

? X16 organization

? Byte control by LDQM and UDQM

? 4096 refresh cycles/64ms

? Burst termination by burst stop and precharge command