描述 Description

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.

特性 Features

? Low On-Resistance
? Improves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation
? Low-Profile Package
? Board Space Saving
? ESD Diode-Protected Gate
? ESD Resistance
? RoHS Compliance
? Environmental Consideration
? Complementary N-Channel and P-Channel MOSFET
? Reduced Mounting Area
? 4V drive

應(yīng)用 Application

? Motor Driver

簡介

VEC2616屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-陣列。由制造生產(chǎn)的VEC2616晶體管 - FET，MOSFET - 陣列場效應(yīng)晶體管 (FET) 是使用電場控制電流流動的電子器件。向柵極端子施加電壓會改變漏極端子和源極端子之間的電導(dǎo)率。FET 也稱為單極型晶體管，因為其涉及單載流子類型的操作。也就是說，F(xiàn)ET 在操作中使用電子或空穴作為載流子，而不是同時使用兩者。場效應(yīng)晶體管通常在低頻下顯示出極高的輸入阻抗。