首頁>VBT1545CBP-E3_V01>規(guī)格書詳情
VBT1545CBP-E3_V01中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
VBT1545CBP-E3_V01 |
| 功能描述 | Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection |
| 文件大小 |
102.51 Kbytes |
| 頁面數(shù)量 |
4 頁 |
| 生產(chǎn)廠商 | Vishay Vishay Siliconix |
| 中文名稱 | 威世科技 威世科技半導(dǎo)體 |
| 網(wǎng)址 | |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2025-9-11 18:29:00 |
| 人工找貨 | VBT1545CBP-E3_V01價格和庫存，歡迎聯(lián)系客服免費人工找貨 |
VBT1545CBP-E3_V01規(guī)格書詳情
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
? TJ 200 °C max. in solar bypass mode application
? Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: D2PAK (TO-263AB)?
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102?
E3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
