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VBL2609

P-Channel 60-V (D-S) 175 °C MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?PackagewithLowThermalResistance ?100RgTested

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

2609B

BroadbandPhotodiodeModule

The2609Bisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiberopticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetobettercontrolofparasitic

EMCORE

Emcore Corporation

2609B

2609BBroadbandPhotodiodeModule

Description The2609Bisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiber-opticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetobettercontro

agere

Agere Systems

2609C

2609CBroadbandPhotodiodeModule

Description The2609Cisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiber-opticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetocontrolofpa

agere

Agere Systems

AP2609GY-HF

SimpleDriveRequirement,SmallPackageOutline

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

AP2609GYT-HF

SimpleDriveRequirement,SmallSize&LowerProfile

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

CEC2609

DualEnhancementModeFieldEffectTransistor(NandPChannel)

20V,4.8A,RDS(ON)=38mW@VGS=4.5V. FEATURES RDS(ON)=55mW@VGS=2.5V. -20V,-3.0A,RDS(ON)=100mW@VGS=-4.5V. RDS(ON)=145mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. S2

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEH2609

DualEnhancementModeFieldEffectTransistor

FEATURES ■20V,3.5A,RDS(ON)=60mΩ@VGS=4.5V. RDS(ON)=80mΩ@VGS=2.5V. ■-20V,-2.5A,RDS(ON)=100mΩ@VGS=-4.5V. RDS(ON)=145mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapa

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEH2609A

DualEnhancementModeFieldEffectTransistor(NandPChannel)

20V,4A,RDS(ON)=45mW@VGS=4.5V. FEATURES RDS(ON)=55mW@VGS=2.5V. -20V,-2.8A,RDS(ON)=90mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FKN2609

P-Ch20VFastSwitchingMOSFETs

Description TheFKN2609isthehighcelldensitytrenched P-chMOSFETs,whichprovidesexcellentRDSON andefficiencyformostofthesmallpower switchingandloadswitchapplications. TheFKN2609meetstheRoHSandGreenProduct requirementwithfullfunctionreliabilityapproved.

FETEKFETek Technology Corp.

臺(tái)灣東沅東沅科技股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
VBsemi(臺(tái)灣微碧)
2447
TO263
105000
800個(gè)/圓盤(pán)一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)
 詢價(jià)
VBSEMI臺(tái)灣微碧
23+
TO263
22820
原裝正品，支持實(shí)單
 詢價(jià)
24+
N/A
58000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
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VBSEMI
24+
con
35960
查現(xiàn)貨到京北通宇商城
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FUJI TERMINAL
24+
con
10000
查現(xiàn)貨到京北通宇商城
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MINI
24+
SMD
3600
MINI專(zhuān)營(yíng)品牌全新原裝正品假一賠十
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CUI
20+
電源模塊
64
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
CUI
22+
NA
500000
萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂
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CUI
22+
NA
222
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A
24+
DIP-8
6
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更多VBL2609供應(yīng)商 更新時(shí)間2025-7-29 11:01:00

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