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VB20150SG

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A

UltraLowVF=0.57VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECand

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB20150SG

High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB20150SG

High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB20150SG-E3

High efficiency operation

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB20150SG-E3

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB,

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB20150SG-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A

UltraLowVF=0.57VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECand

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB20150SG-E3/8W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A

UltraLowVF=0.57VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECand

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB20150SG-E3SLASH4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A

UltraLowVF=0.57VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECand

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB20150SG-E3SLASH8W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A

UltraLowVF=0.57VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECand

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB20150SG-E3

High Voltage Trench MOS Barrier Schottky Rectifier; Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    VB20150SG

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
達(dá)高TECCOR
23+
TO-220
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
VISHAY/威世
22+
TO-263
6000
十年配單,只做原裝
 詢價(jià)
VISHAY/威世
23+
TO-263
6000
原裝正品，支持實(shí)單
 詢價(jià)
VISHAY/威世
22+
TO-263
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
VISHAY
25+
TO-263
12300
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價(jià)
VISHAY
24+
TO-263
5000
全新原裝正品,現(xiàn)貨銷售
 詢價(jià)
VISHAY
22+23+
TO-263
8000
新到現(xiàn)貨，只做原裝進(jìn)口
 詢價(jià)
VISHAY
24+
TO-263
12000
原裝正品 假一罰十 可拆樣
詢價(jià)
VISHAY
1809+
TO-263
3675
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
GENERALSEMICONDUCTORVISHAY
24+
NA
30000
房間原裝現(xiàn)貨特價(jià)熱賣,有單詳談
 詢價(jià)
更多VB20150SG供應(yīng)商 更新時(shí)間2025-7-29 11:01:00

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