描述 Description

The V53C818H is a 524,288 x 16 bit high performance CMOS dynamic random access memory. The V53C818H offers Page mode operation with Extended Data Output. An address, CAS and RAS input capacitances are reduced to one half when the 256K x 16 DRAM is used to construct the same memory density. The V53C818H has asymmetric address, 10-bit row and 9-bit column.

All inputs are TTL compatible. EDO Page Mode operation allows random access up to 512 x 16 bits, within a page, with cycle times as short as 15ns. The V53C818H is ideally suited for graphics, digital signal processing and high performance peripherals.

特性 Features

■ 512K x 16-bit organization

■ EDO Page Mode for a sustained data rate of 83 MHz

■ RAS access time: 30, 35, 40, 45, 50 ns

■ Dual CAS Inputs

■ Pin-to-Pin compatible with 256K x 16

■ Low power dissipation

■ Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh

■ Refresh Interval: 512 cycles/8 ms

■ Available in 40-pin 400 mil SOJ and 40/44L-pin 400 mil TSOP-II packages

■ Single +5V ±10 Power Supply

■ TTL Interface