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V30150C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220ABa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V30150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

UltraLowVF=0.56VatIF=5A ? FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V30150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V30150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V30150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V30150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A; Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V30150C/ VI30150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A; ·Trench MOS Schottky technology\n·Low forward voltage drop, low power losses\n·High efficiency operation\n;

分立

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V30150C_V01

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220ABa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V30150C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

UltraLowVF=0.56VatIF=5A ? FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V30150C-E3SLASH4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

UltraLowVF=0.56VatIF=5A ? FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    V30150C

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

供應(yīng)商型號品牌批號封裝庫存備注價格
VISHAY
24+
TO-220
5000
只做原裝公司現(xiàn)貨
 詢價
VISHAY
23+
TO-220
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
VISHAY原裝
25+23+
TO-220
22349
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價
VISHAY
1822+
TO-220
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
VISHAY
18+
TO-220
41200
原裝正品,現(xiàn)貨特價
 詢價
VISHAY原裝
24+
TO-220
30980
原裝現(xiàn)貨/放心購買
 詢價
AVXKYOCERA
24+
1210
10000
原裝正品價格優(yōu)勢!歡迎詢價QQ:385913858TEL:15
 詢價
Vishay(威世)
23+
NA
20094
正納10年以上分銷經(jīng)驗原裝進(jìn)口正品做服務(wù)做口碑有支持
 詢價
VISHAY
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VISHAY/威世
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多V30150C供應(yīng)商 更新時間2025-7-30 10:19:00

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