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V10150C

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V10150C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V10150C

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V10150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V10150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V10150C

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V10150C_V01

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V10150C-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V10150C-E3SLASH4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V10150C_09

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細參數(shù)

  • 型號：

    V10150C

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價格
中性
23+
TO220-3
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VISHAY/威世
24+
NA/
3350
原裝現(xiàn)貨,當天可交貨,原型號開票
 詢價
VISHAY/威世
24+
TO-220
60000
全新原裝現(xiàn)貨
 詢價
VISHAY
2016+
TO-220
6000
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
 詢價
VISHAY品牌
2016+
TO-220
6528
房間原裝進口現(xiàn)貨假一賠十
 詢價
VISHAY
17+
TO220-3
6200
詢價
Vishay
24+
NA
3000
進口原裝正品優(yōu)勢供應(yīng)
 詢價
VISHAY/威世通
20+
TO220-3
38560
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
VISHAY
24+
TO-220
65200
一級代理/放心采購
 詢價
VISHAY
1809+
TO-220
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
更多V10150C供應(yīng)商 更新時間2025-7-28 11:00:00

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