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首頁(yè) >UPD61010AGD-LBD>規(guī)格書(shū)列表

零件編號(hào)	下載訂購(gòu)	功能描述/絲印	制造商上傳企業(yè)	LOGO
61010	文件：87.68 Kbytes Page：2 Pages	PHOTODARLINGTON??IGTAIL? DESCRIPTION The61010isanN-P-NPlanarSiliconPhotodarlingtonTransistorinapackagedesignedtobemountedinasingle-cladprintedcircuitboard.Itslargeeffectiveapertureandnarrowangularresponsemakethisahighlysensitivedevicewithminimumresponsetooff-axisorstraylight.Th	MICROPAC micropac industries inc	MICROPAC
MP61010	文件：146.09 Kbytes Page：2 Pages	GaAsPINDIODES	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
PHPT61010NY	文件：720.78 Kbytes Page：16 Pages	100V,10ANPNhighpowerbipolartransistor 1.Generaldescription NPNhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-Mounted Device(SMD)powerplasticpackage. PNPcomplement:PHPT61010PY 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Hightemperatureapplicationsupto175°C ?ReducedPrinted	NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司	NEXPERIA
PHPT61010NY-Q	文件：283.89 Kbytes Page：14 Pages	100V,10ANPNhighpowerbipolartransistor 1.Generaldescription NPNhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. PNPcomplement:PHPT61010PY-Q 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Hightemperatureapplicationsupto175°C ?ReducedPrin	NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司	NEXPERIA
PHPT61010PY	文件：719.8 Kbytes Page：16 Pages	100V,10APNPhighpowerbipolartransistor 1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice (SMD)powerplasticpackage. NPNcomplement:PHPT61010NY. 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Suitableforhightemperatureapplicationsupto175°C ?Re	NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司	NEXPERIA
PHPT61010PY-Q	文件：281.36 Kbytes Page：14 Pages	100V,10APNPhighpowerbipolartransistor 1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. NPNcomplement:PHPT61010NY-Q 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Suitableforhightemperatureapplicationsupto175°C ?	NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司	NEXPERIA
T-61010	文件：27.65 Kbytes Page：1 Pages	LowProfileInternationalSeriesPowerTransformer	RHOMBUS-IND Rhombus Industries Inc.	RHOMBUS-IND
TPS61010	文件：459.6 Kbytes Page：25 Pages	HIGH-EFFICIENCY,1-CELLAND2-CELLBOOSTCONVERTERS	TITexas Instruments 德州儀器美國(guó)德州儀器公司	TI
TPS61010DGS	文件：1.12285 Mbytes Page：31 Pages	HIGH-EFFICIENCY,1-CELLAND2-CELLBOOSTCONVERTERS	TI1Texas Instruments 德州儀器美國(guó)德州儀器公司	TI1
TPS61010DGS	文件：459.6 Kbytes Page：25 Pages	HIGH-EFFICIENCY,1-CELLAND2-CELLBOOSTCONVERTERS	TITexas Instruments 德州儀器美國(guó)德州儀器公司	TI

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