描述 Description

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT
FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONSDESCRIPTION
The μPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifiers. The device is packaged in surface mount 8 pin L2MM (Lead Less Mini Mold) plastic package.FEATURES
? Output Power : Pout = +21 dBm MIN. @Pin = ?5 dBm, f = 1.9 GHz, VDS = 3.0 V
: Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V
? Single Supply voltage : VDS = 3.0 V TYP.
? Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.APPLICATIONS
? 1.9 GHz applications (Example : PHS etc.)
? 2.4 GHz applications (Example : Wireless LAN etc.)TI

特性 Features

? Output Power : Pout = +21 dBm MIN. @Pin = ?5 dBm, f = 1.9 GHz, VDS = 3.0 V
: Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V
? Single Supply voltage : VDS = 3.0 V TYP.
? Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.

應(yīng)用 Application

? 1.9 GHz applications (Example : PHS etc.)
? 2.4 GHz applications (Example : Wireless LAN etc.)TI

簡介

UPD5702TU-A屬于RF/IF射頻/中頻RFID的射頻放大器。由制造生產(chǎn)的UPD5702TU-A射頻放大器在射頻應(yīng)用中，射頻放大器產(chǎn)品可用于信號增益和緩沖。這些產(chǎn)品與通用運(yùn)算放大器的不同之處在于，它們通常適用于更高的頻率，更傾向于提供不可調(diào)節(jié)的固定增益，并且輸入或輸出阻抗值符合常用傳輸線特性阻抗。