描述 Description

DESCRIPTION
The μPC2757TB and μPC2758TB are silicon monolithic integrated circuit designed as 1st frequency down converter for cellular/cordless telephone receiver stage. The ICs consist of mixer and local amplifier. The μPC2757TB features low current consumption and the μPC2758TB features improved intermodulation. From these two version, you can chose either IC corresponding to your system design. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to reduce your system size.
The μPC2757TB and μPC2758TB are manufactured using NEC’s 20 GHz fT NESAT?||| silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.FEATURES
? Wideband operation : fRFin = 0.1 to 2.0 GHz, fIFin = 20 to 300 MHz
? High-density surface mounting : 6-pin super minimold package
? Low current consumption : ICC = 5.6 mA TYP. @ μPC2757TB
??????????????????????????? ????????? ICC = 11 mA TYP. @ μPC2758TB
? Supply voltage : VCC = 2.7 to 3.3 V
? Minimized carrier leakage : Due to double balanced mixer
? Equable output impedance : Single-end push-pull IF amplifier
? Built-in power save functionAPPLICATIONS
? Cellular/cordless telephone up to 2.0 GHz MAX. (example: GSM, PDC800M, PDC1.5G and so on): μPC2758TB
? Cellular/cordless telephone up to 2.0 GHz MAX. (example: CT1, CT2 and so on): μPC2757TB

特性 Features

? Wideband operation : fRFin = 0.1 to 2.0 GHz, fIFin = 20 to 300 MHz
? High-density surface mounting : 6-pin super minimold package
? Low current consumption : ICC = 5.6 mA TYP. @ μPC2757TB
??????????????????????????? ????????? ICC = 11 mA TYP. @ μPC2758TB
? Supply voltage : VCC = 2.7 to 3.3 V
? Minimized carrier leakage : Due to double balanced mixer
? Equable output impedance : Single-end push-pull IF amplifier
? Built-in power save function