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首頁(yè)>UPA835TF>規(guī)格書(shū)詳情

UPA835TF中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

UPA835TF
廠商型號(hào)

UPA835TF

功能描述

NPN SILICON EPITAXIAL TWIN TRANSISTOR

文件大小

72.41 Kbytes

頁(yè)面數(shù)量

10 頁(yè)

生產(chǎn)廠商

NEC

中文名稱

瑞薩

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-8-31 23:01:00

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UPA835TF規(guī)格書(shū)詳情

DESCRIPTION

The UPA835TF has two different built-in transistors for low cost amplifier and oscillator applications in the VHF/UHF band. Low noise figures, high gain, high current capability, and medium output give this device high dynamic range and excellent linearity for two-stage amplifiers. This device is also ideally suited for use in a VCO/buffer amplifier application. The thinner package style allows for higher density designs.

FEATURES

? LOW NOISE:

Q1:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA

Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA

? HIGH GAIN:

Q1: |S21E|2 = 8.5 dB TYP at f = 1 GHz, VCE = 3 V, lc = 10 mA

Q2: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA

? 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

? 2 DIFFERENT BUILT-IN TRANSISTORS(Q1: NE685, Q2: NE856)

產(chǎn)品屬性

  • 型號(hào):

    UPA835TF

  • 制造商:

    NEC

  • 制造商全稱:

    NEC

  • 功能描述:

    NPN SILICON EPITAXIAL TWIN TRANSISTOR

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
NEC
24+
NA/
4216
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NEC
24+
SOT-363
80000
只做自己庫(kù)存 全新原裝進(jìn)口正品假一賠百 可開(kāi)13%增
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NEC
25+23+
SOT363
12923
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NEC
24+
SOT363
880000
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NEC
23+
SOT666
8293
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NEC
25+
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4500
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NEC
24+
SOT-363
11208
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NEC
17+
SOT-363
6200
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NEC
16+
SOT-363
10000
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NEC
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100500
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