描述 Description

The uP1964 is designed to high-speed low-side driver forenhancement mode Gallium Nitride (GaN) transistors andMOSFETs application. With high source and sink outputcurrent capability, the uP1964 offers enhanced immunityagainst Miller turn-on effect.

The uP1964 has two separate gate outputs allowingindependent adjustment of the turn-on and turn-off capabilityby adding impedance for gate loop. This part has fastswitching speed and minimized propagation delays,facilitating high-frequency operation. The uP1964 can tailordifferent gate voltage requirements of GaN transistor orMOSFETs through VDRV. The gate driver output voltagelevel can be adjusted through external resistor voltagedivider. The PWM input of this device is CMOS logiccompatible and can withstand the input voltage up to 5.5Vregardless of the VDRV voltage. This device also supportssupply input under voltage lockout. The uP1964 is availablein thermally enhanced WDFN3x3-10L.

特性 Features

? Independent Source and Sink Outputs for Controllable Rise and Fall Times
? Fast Propagation Delays (30ns, Typical)
? Fast Rise/Fall Times (6.7ns/3.9ns, Typical)
? Integrated LDO for Adjustable Gate Driver Output Voltage Level
? 6V to 13.2V Single Supply Range
? CMOS Compatible Input-Logic Threshold (Independent of Supply Voltage)
? Hysteretic-Logic Thresholds for High-Noise Immunity
? -40°C to +125°C Operating Temperature Range
? RoHS Compliant and Halogen Free

應(yīng)用 Application

? Switched-Mode Power Supplies
? AC-to-DC, DC-to-DC Converters
? Motor Control Solar Power, UPS