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首頁 >UNR521MGOL>規(guī)格書列表

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UNR521N

SiliconNPNepitaxialplanartype

SiliconNPNepitaxialplanartype ??????? Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentandreductionofthenumberofparts ?S-Minitypepackage,allowingautomaticinsertionthroughthetapepackingandmagazinepacking

PanasonicPanasonic Semiconductor

松下松下電器

UNR521T

SiliconNPNepitaxialplanartype

SiliconNPNepitaxialplanartype ??????? Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentandreductionofthenumberofparts ?S-Minitypepackage,allowingautomaticinsertionthroughthetapepackingandmagazinepacking

PanasonicPanasonic Semiconductor

松下松下電器

UNR521V

SiliconNPNepitaxialplanartype

SiliconNPNepitaxialplanartype ??????? Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentandreductionofthenumberofparts ?S-Minitypepackage,allowingautomaticinsertionthroughthetapepackingandmagazinepacking

PanasonicPanasonic Semiconductor

松下松下電器

UNR521W

SiliconNPNepitaxialplanartype

SiliconNPNepitaxialplanartype Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentandreductionofthenumberofparts ?SMinitypepackageallowingeasyautomaticinsertionthroughtapepacking

PanasonicPanasonic Semiconductor

松下松下電器

UNR521Z

SiliconNPNepitaxialplanartype

SiliconNPNepitaxialplanartype ??????? Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentandreductionofthenumberofparts ?S-Minitypepackage,allowingautomaticinsertionthroughthetapepackingandmagazinepacking

PanasonicPanasonic Semiconductor

松下松下電器

VDD521LCTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDD521LNTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDD521MCTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDD521MNTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDD521SCTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

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