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4803B

P-ChannelEnhancementModePowerMOSFET

Description The4803Busesadvancedtrenchtechnologytoprovide excellentRDS(ON)andlowgatecharge.Thecomplementary MOSFETsmaybeusedtoformalevelshiftedhighside switch,andforahostofotherapplications. GeneralFeatures VDS=-30V,ID=-5.0A RDS(ON)

ACNU-4803

InvertedLogicHighCMRIntelligentPowerModule(IPM)andGateDriveInterfaceOptocoupler

AGSC-4803S

100/1000BaseTGigabitDualPortTransformer

AGTA-4803S

100/1000BaseTGigabitDualPortTransformer

AO4803

DualP-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO4803usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO4803isPb-free(meetsROHS&Sony259specifications).AO4803LisaGreenProductorde

AO4803

30VDualP-ChannelMOSFET

AO4803A

DualP-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO4803AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. ProductSummary VDS-30V ID(atVGS=-10V)

AO4803A

DualP-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?100UISTested ??????? APPLICATIONS ?LoadSwitches

AO4803A

30VDualP-ChannelMOSFET

AO4803A

DualP-ChannelMOSFET

■Features ●VDS(V)=-30V ●ID=-5A(VGS=-10V) ●RDS(ON)