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| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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GaAsINTEGRATEDCIRCUIT FEATURES ?Supplyvoltage:VDD=2.7to3.0V(2.8VTYP.) ?Switchcontrolvoltage:Vcont(H)=2.7to3.0V(2.8VTYP.) :Vcont(L)=?0.2to+0.2V(0VTYP.) ?Lowinsertionloss:LINS1=0.25dBTYP.@f=0.5to1.0GHz,VDD=2.8V,Vcont=2.8V/0V :LINS2=0.30dBTYP.@f=1. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
L,S-BANDSPDTSWITCH | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
1WSINGLECONTROLL,S-BANDSPDTSWITCH DESCRIPTION NECsUPG2015TBisasinglecontrolsinglecontrolGaAsMMICL,S-bandSPDT(SinglePoleDoubleThrow)switchformobilephoneandL,S-bandapplications. Thisdevicecanoperatefrequencyfrom0.5to2.5GHz,withlowinsertionlossandhighisolation. Thisdeviceishousedina6-p | CEL California Eastern Labs | CEL | ||
NECs1WSINGLECONTROLL,S-BANDSPDTSWITCH DESCRIPTION TheμPG2015TBisaGaAsMMICforL,S-bandSPDT(SinglePoleDoubleThrow)switchwhichweredevelopedformobilephoneandanotherL,S-bandapplication. Thisdevicecanoperatefrequencyfrom0.5GHzto2.5GHz,havingthelowinsertionlossandhighisolation.Thisdeviceishouse | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
POWERRECTIFIERS(20A,50-200V) SwitchmodeFullPlasticDualUltrafastPowerRectifiers ...Designedforuseinswitchingpowersupplies,invertersandasfreewheelingdiodes.Thesestate-of-the-artdeviceshavethefollowingfeatures: ?HighSurgeCapacity ?LowPowerLoss,HighEfficiency ?GlassPassivatedchipjunction | MOSPECMospec Semiconductor 統(tǒng)懋統(tǒng)懋半導體股份有限公司 | MOSPEC | ||
EmbeddedProcessingUnit | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
EmbeddedProcessingUnit | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
10/100BASE-TXVOICEOVERIPMAGNETICS | BOTHHAND Bothhand USA | BOTHHAND | ||
P-ChannelMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
SingleP-Channel,-20V,-2.4A,PowerMOSFET | WILLSEMIWill Semiconductor Co.,Ltd.Shanghai 韋爾股份上海韋爾半導體股份有限公司 | WILLSEMI |
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