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UPG2006TB

NECs1.8VL,S-BANDSPDTSWITCH

DESCRIPTION TheμPG2006TBisanL,S-bandSPDT(SinglePoleDoubleThrow)GaAsFETswitchwhichwasdevelopedfordigitalcellularorcordlesstelephoneapplication.Thedevicecanoperatefrom500MHzto2.5GHz,havingthelowinsertionlossandhighisolationby1.8Vcontrolvoltage. FEATURE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPG2006TB

GaAsINTEGRATEDCIRCUIT

FEATURES ?Lowinsertionloss:LINS=0.3dBTYP.@Vcont=1.8V/0V,f=1GHz LINS=0.45dBTYP.@Vcont=1.8V/0V,f=2.5GHz ?Highisolation:ISL=29dBTYP.@Vcont=1.8V/0V,f=2GHz ISL=25dBTYP.@Vcont=1.8V/0V,f=2.5GHz ?6-pinsuperminimoldpackage(2.0′1.2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

V2006B

ASS0848HS

ASSMANN

ASSMANN WSW COMPONENTS

VP2006A

10/100BASE-TXVOICEOVERIPMAGNETICS

BOTHHAND

Bothhand USA

VP2006AM

10/100BASE-TXVOICEOVERIPMAGNETICS

BOTHHAND

Bothhand USA

VP2006B

10/100BASE-TXVOICEOVERIPMAGNETICS

BOTHHAND

Bothhand USA

VP2006Z

10/100BASE-TXVOICEOVERIPMAGNETICS

BOTHHAND

Bothhand USA

VS2006A

10/100BASE-TXVOICEOVERIPMAGNETICS

BOTHHAND

Bothhand USA

WPM2006

PowerMOSFETandSchottkyDiode

WILLSEMIWill Semiconductor Co.,Ltd.Shanghai

韋爾股份上海韋爾半導體股份有限公司

WST2006

DualN-ChannelMOSFET

WIINSOKShenzhen Guan Hua Wei Ye Co., Ltd

微碩半導體微碩半導體(深圳)有限公司

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