描述 Description

The UCC2720x-Q1 family of high-frequency N-channel MOSFET drivers include a 120-V bootstrap diode and high-side and low-side drivers with independent inputs for maximum control flexibility. This allows for N-channel MOSFET control in half-bridge, full-bridge, two-switch forward, and active-clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1?ns between the turnon and turnoff of each other. An on-chip bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers, forcing the outputs low if the drive voltage is below the specified threshold.Two versions of the UCC2720x-Q1 are offered – the UCC27200-Q1 has high-noise-immune CMOS input thresholds, and the UCC27201-Q1 has TTL-compatible thresholds.Both devices are offered in the 8-pin SO PowerPAD (DDA) package. For all available packages, see the orderable addendum at the end of the data sheet.

特性 Features

? Qualified for Automotive Applications
? AEC-Q100 Qualified With the Following Results:
? Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range
? Device HBM ESD Classification Level 2
? Device CDM ESD Classification Level C5

? Drives Two N-Channel MOSFETs in High-Side and Low-Side Configuration
? Maximum Boot Voltage: 120 V
? Maximum VDD Voltage: 20 V
? On-Chip 0.65-V VF, 0.6-? RD Bootstrap Diode
? Greater than 1 MHz of Operation
? 20-ns Propagation Delay Times
? 3-A Sink, 3-A Source Output Currents
? 8-ns Rise and 7-ns Fall Time With 1000-pF Load
? 1-ns Delay Matching
? Specified from –40°C to 140°C (Junction Temperature)