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0909NS

n-ChannelPowerMOSFET

1.Description OptiMOS?30VproductsareclassleadingpowerMOSFETsforhighestpower densityandenergyefficientsolutions.Ultralowgate-andoutputchargestogether withlowestonstateresistanceinsmallfootprintpackagesmakeOptiMOS?30V thebestchoiceforthedemandingrequirements

APLT0909-RT

PLLModule

BSC0909NS

n-ChannelPowerMOSFET

BSZ0909ND

DualN-channelOptiMOS??MOSFET

Features ·DualN-channelOptiMOS?MOSFET ·Enhancementmode ·Logiclevel(4.5Vrated) ·Avalancherated ·100Lead-free;RoHScompliant ·Halogen-freeaccordingtoIEC61249-2-21

BSZ0909NS

n-ChannelPowerMOSFET

1.Description OptiMOS?30VproductsareclassleadingpowerMOSFETsforhighestpower densityandenergyefficientsolutions.Ultralowgate-andoutputchargestogether withlowestonstateresistanceinsmallfootprintpackagesmakeOptiMOS?30V thebestchoiceforthedemandingrequirements

DMI0909

LeadedPowerChokesDMI

MGF0909

L,SBANDPOWERGaAsFET?

DESCRIPTION TheMGF0909A,GaAsFETwithanN-channelschottkygate,isdesignedforuseinUHFbandamplifiers. FEATURES ?Highoutputpower P1dB=38dBm(TYP.)@f=2.3GHz ?Highpowergain GLP=11dB(TYP.)@f=2.3GHz,Pin=20dBm ?Highpoweraddedefficiency hadd=45(TYP.

MGF0909A

L,SBANDPOWERGaAsFET?

DESCRIPTION TheMGF0909A,GaAsFETwithanN-channelschottkygate,isdesignedforuseinUHFbandamplifiers. FEATURES ?Highoutputpower P1dB=38dBm(TYP.)@f=2.3GHz ?Highpowergain GLP=11dB(TYP.)@f=2.3GHz,Pin=20dBm ?Highpoweraddedefficiency hadd=45(TYP.

MGF0909A

L,SBANDPOWERGaAsFET?

MGF0909A

High-powerGaAsFET(smallsignalgainstage)