首頁 >TSV20120CG>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
20.0AmpereHeatsinkDoublerPolarityUltraFastRecoveryRectifiers | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司 | THINKISEMI | ||
20.0AmpereHeatsinkCommonCathodeUltraFastRecoveryRectifiers | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司 | THINKISEMI | ||
20.0AmpereHeatsinkCommonAnodeUltraFastRecoveryRectifiers | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司 | THINKISEMI | ||
20.0AmpereHeatsinkCommonAnodeUltraFastRecoveryRectifiers | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司 | THINKISEMI | ||
20.0AmpereHeatsinkSeriesConnectionUltraFastRecoveryRectifiers | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司 | THINKISEMI | ||
ULTRAFASTRECOVERYMODULES | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
UltrafastRecoveryModules | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
DualHighVoltageTrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.54VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) ?Componentinacco | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
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