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首頁 >TSM5NC50CPROG>規(guī)格書列表

零件編號	下載訂購	功能描述/絲印	制造商上傳企業(yè)	LOGO
P5NC50	文件：534.01 Kbytes Page：12 Pages	N-CHANNEL500V-1.3ohm-5.5ATO-220/FP/D2PAK/I2PAKPowerMesh??IMOSFET DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
P5NC50FP	文件：534.01 Kbytes Page：12 Pages	N-CHANNEL500V-1.3ohm-5.5ATO-220/FP/D2PAK/I2PAKPowerMesh??IMOSFET DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
STB5NC50	文件：1.10907 Mbytes Page：10 Pages	N-Channel650V(D-S)PowerMOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司	VBSEMI
STB5NC50	文件：534.01 Kbytes Page：12 Pages	N-CHANNEL500V-1.3ohm-5.5ATO-220/FP/D2PAK/I2PAKPowerMesh??IMOSFET DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
STP5NC50	文件：534.01 Kbytes Page：12 Pages	N-CHANNEL500V-1.3ohm-5.5ATO-220/FP/D2PAK/I2PAKPowerMesh??IMOSFET DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
STP5NC50FP	文件：534.01 Kbytes Page：12 Pages	N-CHANNEL500V-1.3ohm-5.5ATO-220/FP/D2PAK/I2PAKPowerMesh??IMOSFET DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
TSM5NC50CF	文件：413.03 Kbytes Page：6 Pages	Advancedplanarprocess	TSCTaiwan Semiconductor Company, Ltd 臺灣半導體臺灣半導體股份有限公司	TSC
TSM5NC50CP	文件：312.52 Kbytes Page：6 Pages	Halogen-freeaccordingtoIEC61249-2-21	TSCTaiwan Semiconductor Company, Ltd 臺灣半導體臺灣半導體股份有限公司	TSC
TSM5NC50CZ	文件：334.67 Kbytes Page：6 Pages	Advancedplanarprocess	TSCTaiwan Semiconductor Company, Ltd 臺灣半導體臺灣半導體股份有限公司	TSC

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