首頁 >TPSTR2P3LLH6>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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P-ChannelEnhancementModePowerMOSFET GeneralDescription Theusesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatecharge andoperationwithgatevoltagesaslowas2.5V. Thisdeviceissuitableforuseasaloadswitchor inPWMapplications. STR2P3LLH6 Features VDS-30V ID(atVGS=-10V)-5.0A RDS(ON) | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
Verylowon-resistance Description ThisdeviceisaP-channelPowerMOSFET developedusingtheSTripFET?H6technology, withanewtrenchgatestructure.Theresulting PowerMOSFETexhibitsverylowRDS(on)inall packages. Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS |
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