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TPS7H2211HKR/EM

絲?。?strong>TPS7H2211HKR/EM；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse

1 Features ? Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) ? Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy

文件：2.68613 Mbytes 頁數(shù)：49 Pages

TI

德州儀器

TPS7H2211HKR/EM

絲?。?strong>TPS7H2211HKR/EM；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse

1 Features ? Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) ? Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t

文件：2.61896 Mbytes 頁數(shù)：51 Pages

TI

德州儀器

TPS7H2211HKR/EM

絲?。?strong>TPS7H2211HKR/EM；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse

1 Features ? Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) ? Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t

文件：2.58479 Mbytes 頁數(shù)：51 Pages

TI

德州儀器

TPS7H2211HKRSLASHEM

絲印：TPS7H2211HKR/EM；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse

1 Features ? Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) ? Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy

文件：2.68613 Mbytes 頁數(shù)：49 Pages

TI

德州儀器

TPS7H2211HKRSLASHEM

絲?。?strong>TPS7H2211HKR/EM；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse

1 Features ? Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) ? Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t

文件：2.61896 Mbytes 頁數(shù)：51 Pages

TI

德州儀器

TPS7H2211HKRSLASHEM

絲印：TPS7H2211HKR/EM；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse

1 Features ? Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) ? Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t

文件：2.58479 Mbytes 頁數(shù)：51 Pages

TI

德州儀器

TPS7H2211HKR/EM

絲印：TPS7H2211HKR/EM；Package：CFP；TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse

文件：1.8583 Mbytes 頁數(shù)：41 Pages

TI

德州儀器

TPS7H2211HKRSLASHEM

絲?。?strong>TPS7H2211HKR/EM；Package：CFP；TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse

文件：1.8583 Mbytes 頁數(shù)：41 Pages

TI

德州儀器

TPS7H2211HKR/EM

絲印：TPS7H2211HKR/EM；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse

1 Features ? Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) ? Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy

文件：2.68613 Mbytes 頁數(shù)：49 Pages

TI

德州儀器

TPS7H2211HKR/EM

絲?。?strong>TPS7H2211HKR/EM；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse

1 Features ? Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) ? Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t

文件：2.61896 Mbytes 頁數(shù)：51 Pages

TI

德州儀器

供應(yīng)商型號品牌批號封裝庫存備注價格
TI
25+
CFP (HKR)
6000
原廠原裝,價格優(yōu)勢
 詢價
TI
23+
CFP-16
5000
全新原裝正品現(xiàn)貨
 詢價
TI
25+
原封裝
66330
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
 詢價
Texas Instruments
23+/24+
32-TSSOP
8600
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨
 詢價
TI/德州儀器
25+
原廠封裝
10280
原廠授權(quán)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源！
 詢價
TI/德州儀器
25+
原廠封裝
10280
詢價
TI/德州儀器
25+
原廠封裝
9999
詢價
TI/德州儀器
25+
原廠封裝
10280
詢價
TI德州儀器
22+
24000
原裝正品現(xiàn)貨,實單可談,量大價優(yōu)
 詢價
TI(德州儀器)
2024+
N/A
500000
誠信服務(wù),絕對原裝原盤
 詢價
更多TPS7H2211HKR/EM供應(yīng)商 更新時間2025-9-3 14:13:00

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