TPS2330IPWG4屬于集成電路（IC）的熱插拔控制器。由美國德州儀器公司制造生產(chǎn)的TPS2330IPWG4熱插拔控制器PMIC - 熱插拔控制器是能提供電路內(nèi)保護(hù)和控制功能的半導(dǎo)體，可允許帶電情況下在電路中插入或拔除其他組件。熱插拔控制器可用于計(jì)算機(jī)網(wǎng)絡(luò)和通用電源系統(tǒng)，主要根據(jù)輸出電流、受控通道數(shù)量等特性，以及自動(dòng)重試、故障超時(shí)和保護(hù)等特殊功能進(jìn)行區(qū)分。

1FEATURES

? Single-Channel High-Side MOSFET Driver

? Input Voltage: 3 V to 13 V

? Output dV/dt Control Limits Inrush Current

? Circuit-Breaker With Programmable

Overcurrent Threshold and Transient Timer

? Power-Good Reporting With Transient Filter

? CMOS- and TTL-Compatible Enable Input

? Low 5-μA Standby Supply Current (Max)

? Available in 14-Pin SOIC and TSSOP Package

? –40°C to 85°C Ambient Temperature Range

? Electrostatic Discharge Protection

APPLICATIONS

? Hot-Swap/Plug/Dock Power Management

? Hot-Plug PCI, Device Bay

? Electronic Circuit Breaker

DESCRIPTION

The TPS2330 and TPS2331 are single-channel hot-swap controllers that use external N-channel MOSFETs as

high-side switches in power applications. Features of these devices, such as overcurrent protection (OCP),

inrush-current control, output-power status reporting, and the ability to discriminate between load transients and

faults, are critical requirements for hot-swap applications.

The TPS2330/31 devices incorporate undervoltage lockout (UVLO) and power-good (PG) reporting to ensure the

device is off at start-up and confirm the status of the output voltage rails during operation. An internal charge

pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance the N-channel

MOSFETs. The charge pump controls both the rise times and fall times (dV/dt) of the MOSFETs, reducing power

transients during power up/down. The circuit-breaker functionality combines the ability to sense overcurrent

conditions with a timer function; this allows designs such as DSPs, that may have high peak currents during

power-state transitions, to disregard transients for a programmable period.