TPS2105DBVT屬于集成電路（IC）的OR控制器理想二極管。由美國(guó)德州儀器公司制造生產(chǎn)的TPS2105DBVTOR 控制器，理想二極管理想二極管控制器也稱為 OR-ing 控制器，可用于以僅允許單向電流的方式控制外部通道晶體管（通常為 FET），類似于整流二極管，但傳導(dǎo)損耗低得多。在其他應(yīng)用中，它們通常用于在為了冗余和增加電流輸出能力而并行連接的電源中提供逆流保護(hù)。

features

Dual-Input, Single-Output MOSFET Switch

With No Reverse Current Flow (No Parasitic

Diodes)

IN1 . . . 250-mW, 500-mA N-Channel;

18-mA Supply Current

IN2 . . . 1.3-W, 100-mA P-Channel;

0.75-mA Supply Current (VAUX Mode)

Advanced Switch Control Logic

CMOS and TTL Compatible Enable Input

Controlled Rise, Fall, and Transition Times

2.7 V to 5.5 V Operating Range

SOT-23-5 and SOIC-8 Package

–40°C to 85°C Ambient Temperature Range

2-kV Human Body Model, 750-V Charged

Device Model, 200-V Machine-Model

ESD Protection

typical applications

Notebook and Desktop PCs

Cell phone, Palmtops, and PDAs

Battery Management

description

The TPS2104 and TPS2105 are dual-input, single-output power switches designed to provide uninterrupted

output voltage when transitioning between two independent power supplies. Both devices combine one

n-channel (250 mW) and one p-channel (1.3 W) MOSFET with a single output. The p-channel MOSFET (IN2)

is used with auxiliary power supplies that deliver lower current for standby modes. The n-channel MOSFET

(IN1) is used with a main power supply that delivers higher current required for normal operation. Low

on-resistance makes the n-channel the ideal path for higher main supply current when power-supply regulation

and system voltage drops are critical. When using the p-channel MOSFET, quiescent current is reduced to

0.75 mA to decrease the demand on the standby power supply. The MOSFETs in the TPS2104 and TPS2105

do not have the parasitic diodes, typically found in discrete MOSFETs, thereby preventing back-flow current

when the switch is off.