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PESD3V3V1BCSF

DFN0603-2LESDProtectionDevicesROHS

Features 70Wpeakpulsepower(tp=8/20μs) TinyDFN0603-2package Bidirectionalconfigurations Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent IEC61000-4-2 IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)9A(8/20μs) ±30kVcontact±30kVair

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

PESD3V3V1BCSF

70Wpeakpulsepower(tp=8/20μs

Features 70Wpeakpulsepower(tp=8/20μs) TinyDFN0603-2package Bidirectionalconfigurations Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent IEC61000-4-2 IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)9A(8/20μs) Applications CellPhoneHan

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導體廣東友臺半導體有限公司

PESD3V3V1BCSF

UltralowclampingbidirectionalESDprotectiondiode

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PESD3V3V1BCZF

UltralowclampingbidirectionalESDprotectiondiode

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PESD3V3V1BL

LowcapacitancebidirectionalESDprotectiondiode

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

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