TPI12011N屬于電路保護(hù)的TVS-晶閘管。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的TPI12011NTVS - 晶閘管基于晶閘管的瞬態(tài)電壓抑制 (TVS) 器件可用于提供過壓保護(hù)，在正常工作條件下近似于開路。在這些器件兩端施加超過某個(gè)特定值的電壓（稱為擊穿電壓），可使它們進(jìn)入近似于短路的導(dǎo)通狀態(tài)。?這種狀態(tài)一直持續(xù)至流過器件的電流因電路中的一些外部影響而降低到稱為“保持電流”的最小值以下。

描述 Description

Dedicated devices for ISDN interface and high speed data telecom line protection. Equivalent to a triple Trisil? with low capacitance.

特性 Features

■ Bidirectional triple crowbar protection

■ Peak pulse current: IPP = 30 A , 10/1000 μs

■ Breakdown voltage:

– TPI80N: 80 V

– TPI120N: 120 V

■ Available in SO-8 package

■ Low dynamic breakover voltage:

– TPI8011N: 120 V

– TPI12011N: 170 V

Benefits

■ Low capacitance from lines to ground, allowing high speed transmission without signal attenuation

■ Good capacitance balance between lines to ensure longitudinal balance

■ Fixed breakdown voltage in both common and differential modes

■ The same surge current capability in both common and differential modes

■ A particular attention has been given to the internal wire bonding. The “4-point” configuration ensures a reliable protection, eliminating overvoltages introduced by the parasitic inductances of the wiring (LdI/dt), especially for very fast transient overvoltages

Complies with following standards

■ CCITT K17-K20

– 10/700 μs, 1.5 kV

– 5/310 μs, 38 A

■ VDE 0433

– 10/700 μs, 2 kV

– 5/310 μs, 50 A

■ VDE 0878

– 1.2/50 μs, 1.5 kV

– 1/20 μs, 40 A

■ IEC 61000-4-2 level 4

– 0.5/700 μs, 1.5 kV

– 0.2/310 μs, 38 A