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TPCA8006-H

Power MOSFET (N-ch single 60V VDSS 150V); Drain current ID 18 A \nPower Dissipation PD 45 W \nDrain-Source voltage VDSS 100 V \n;

Polarity：N-ch\nGeneration：π-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 馬來西亞\n

TPCA8006-H

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVII)

SwitchingRegulatorApplications MotorDriveApplications DC／DCConverterApplications ?Smallfootprintduetoasmallandthinpackage ?Highspeedswitching ?Lowdrain-sourceON-resistance :RDS(ON)=41m?(typ.)(VG=10V,ID=9A) ?Highforwardtransfer

TPCA8006-H

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPCA8006-H

Switching Regulator Applications

TPCA8006-H_06

Switching Regulator Applications

TPCC8006-H

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPCM8006

FieldEffectTransistorSiliconN-ChannelMOSType(U-MOS??

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetoasmallandthinpackage ?Lowdrain-sourceON-resistance:RDS(ON)=5.5mΩ(typ.) ?Highforwardtransferadmittance:|Yfs|=46S(typ.) ?Lowleakagecurrent:IDSS=10μA(

TPCP8006

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPCP8006

NotebookPCApplicationsPortableEquipmentApplications

TPCP8006

FieldEffectTransistorSiliconN-ChannelMOSType(U-MOSIV)

NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetosmallandthinpackage ?Lowdrain-sourceON-resistance:RDS(ON)=6.5mΩ(typ.) ?Highforwardtransferadmittance:|Yfs|=36S(typ.) ?Lowleakagecurrent:IDSS=10μA(max)(VDS=20V) ?Enhancementmode