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TPCA8102

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIII)

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetosmallandthinpackage ?Lowdrain-sourceONresistance:RDS(ON)=4.5m?(typ.) ?Highforwardtransferadmittance:|Yfs|=60S(typ.) ?Lowleakagecurrent:IDSS=?10μA(max

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCA8102

LithiumIonBatteryApplicationsNotebookpcApplicationsNotebookPCApplicationsPortableEquipmentApplications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCA8102-H

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

TPCC8102

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCC8102

FieldEffectTransistorSiliconP-ChannelMOSType(U-MOS??

NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetoasmallandthinpackage ?Lowdrain-sourceON-resistance: RDS(ON)=14.5mΩ(typ.)(VGS=-10V) ?Lowleakagecurrent:IDSS=-10μA(max)(VDS=-30V) ?Enhancementmode:Vth

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCF8102

FieldEffectTransistorSiliconPChannelMOSType(U-MOSIII)

NotebookPCApplications PortableEquipmentApplications ?Lowdrain-sourceONresistance:RDS(ON)=24m?(typ.) ?Highforwardtransferadmittance:|Yfs|=14S(typ.) ?Lowleakagecurrent:IDSS=?10μA(max)(VDS=?20V) ?Enhancementmode:Vth=?0.5to?1.2V

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCF8102

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIII)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCM8102

FieldEffectTransistorSiliconPChannelMOSType(U-MOS??

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetoasmallandthinpackage ?Lowdrain-sourceON-resistance:RDS(ON)=6.0mΩ(typ.) ?Highforwardtransferadmittance:|Yfs|=44S(typ.) ?Lowleakagecurrent:IDSS=?10μA(

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCP8102

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCP8102

TOSHIBAFieldEffectTransistorSiliconP-ChannelMOSType(U-MOS??

NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetosmallandthinpackage ?Lowdrain-sourceON-resistance:RDS(ON)=13.5mΩ(typ.) ?Highforwardtransferadmittance:|Yfs|=24S(typ.) ?Lowleakagecurrent:IDSS=-10μA(max)(VDS=-20V) ?Enhancement

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

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